vs-4ewh02fn-m3 www.vishay.com vishay semiconductors revision: 14-nov-11 1 document number: 93258 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 4 a fred pt ? features ? hyperfast recovery time ? 175 c max. operatin g junction temperature ? output rectification freewheeling ? low forward voltage drop reduced q rr and soft recovery ? low leakage current ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c description/applications state of the art hyperfast reco very rectifiers specifically designed with optimized perf ormance of forward voltage drop and hyperfast recovery time. the planar structure and th e platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in the output rectification stage of smps, ups, dc/dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package d-pak (to-252aa) i f(av) 4 a v r 200 v v f at i f 0.95 v t rr (typ.) 23 ns t j max. 175 c diode variation single die 2, 4 3 anode 1 n/c d-pak (to-252aa) absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 200 v average rectified forward current i f(av) t c = 164 c 4 a non-repetitive peak surge current i fsm t j = 25 c 80 peak repetitive forward current i fm t c = 164 c, f = 20 khz, d = 50 % 8 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 4 a - 0.87 0.95 i f = 4 a, t j = 150 c - 0.71 0.80 reverse leakage current i r v r = v r rated - - 3 a t j = 150 c, v r = v r rated - 2 20 junction capacitance c t v r = 600 v - 17 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh
vs-4ewh02fn-m3 www.vishay.com vishay semiconductors revision: 14-nov-11 2 document number: 93258 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 100 a/s, v r = 30 v - 23 27 ns i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - 24 - t j = 25 c i f = 4 a di f /dt = 200 a/s v r = 160 v -20- t j = 125 c - 27 - peak recovery current i rrm t j = 25 c - 2 - a t j = 125 c - 3.4 - reverse recovery charge q rr t j = 25 c - 20 - nc t j = 125 c - 46 - thermal - mechanical specifications parameter symbol test condition s min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc -2.73.2c/w approximate weight 0.3 g 0.01 oz. marking device case styl e d-pak (to-252aa) 4ewh02fn
vs-4ewh02fn-m3 www.vishay.com vishay semiconductors revision: 14-nov-11 3 document number: 93258 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v f (v) instantaneous forward current - i f (a) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 tj = 25c tj = 125c tj = 175c reverse voltage - v r (v) reverse current - i r (a) 50 100 150 200 0.0001 0.001 0.01 0.1 1 10 100 tj = 25c tj = 175c tj = 150c tj = 125c tj = 100c tj = 75c tj = 50c reverse voltage - v r (v) junction capacitance - c t (pf) 0 50 100 150 200 10 100 t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.1 1 10 single pulse (thermal resistance) d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.5 d = 02
vs-4ewh02fn-m3 www.vishay.com vishay semiconductors revision: 14-nov-11 4 document number: 93258 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r average forward current - i f (av) (a) allowable case temperature (c) 0 1 2 3 4 5 6 150 155 160 165 170 175 180 dc see note (1) square wave (d=0.50) rated vr applied average power loss ( watts ) average forward current - i f (av) (a) 0123456 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 rms limit dc trr ( nc ) di f /dt (a/s ) 0 0 0 1 0 0 1 5 10 15 20 25 30 35 40 4a, tj = 25c 4a, tj = 125c qrr ( nc ) di f /dt (a/s ) 0 0 0 1 0 0 1 0 50 4a, tj = 25c 4a, tj = 125c
vs-4ewh02fn-m3 www.vishay.com vishay semiconductors revision: 14-nov-11 5 document number: 93258 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-4ewh02fn-m3 www.vishay.com vishay semiconductors revision: 14-nov-11 6 document number: 93258 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-4ewh02fn-m3 75 3000 antistatic plastic tube vs-4ewh02fntr-m3 2000 2000 13" diameter reel vs-4ewh02fntrl-m3 3000 3000 13" diameter reel vs-4EWH02FNTRR-M3 3000 3000 13" diameter reel links to related documents dimensions www.vishay.com/doc?95016 part marking information www.vishay.com/doc?95176 packaging information www.vishay.com/doc?95033 spice model www.vishay.com/doc?95381 2 - current rating (4 = 4 a) 4 - package identifier: w = d-pak e = single diode 5 - h = hyperfast recovery 6 - voltage rating (02 = 200 v) 7 - fn = to-252aa 8 - tr = tape and reel none = tube trl = tape and reel (left oriented) trr = tape and reel (right oriented) 3 - circuit configuration: 1 - vishay semiconductors product - environmental digit: -m3 = halogen-free, rohs compliant and terminations lead (pb)-free 9 device code 5 1 3 2 4 6 7 8 9 vs- 4 e w h 02 fn trl -m3
document number: 95016 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 04-nov-08 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 d-pak (to-252aa) outline dimensions vishay high power products notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) lead dimension uncontrolled in l5 (3) dimension d1, e1, l3 and b3 establish a mi nimum mounting surface for thermal pad (4) section c - c dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) dimension d, and e do not include mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are meas ured at the outermost extremes of the plastic body (6) dimension b1 and c1 applied to base metal only (7) datum a and b to be determined at datum plane h (8) outline conforms to jedec outline to-252aa dimensions in millimeters and inches symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 2.18 2.39 0.086 0.094 e 2.29 bsc 0.090 bsc a1 - 0.13 - 0.005 h 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 l 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 l1 2.74 bsc 0.108 ref. b3 4.95 5.46 0.195 0.215 3 l2 0.51 bsc 0.020 bsc c 0.46 0.61 0.018 0.024 l3 0.89 1.27 0.035 0.050 3 c2 0.46 0.89 0.018 0.035 l4 - 1.02 - 0.040 d 5.97 6.22 0.235 0.245 5 l5 1.14 1.52 0.045 0.060 2 d1 5.21 - 0.205 - 3 ? 0 10 0 10 e 6.35 6.73 0.250 0.265 5 ?1 0 15 0 15 e1 4.32 - 0.170 - 3 ?2 25 35 25 35 ? 1 e (5) b 3 (3) 0.010 cab l3 (3) b a c h c l2 d (5) l4 b 2 x e b 2 (2) l5 1 2 3 4 ? 2 a c2 a a h seating plane c detail ?c? (7) seating plane a1 detail ?c? rotated 90 cw scale: 20:1 (l1) c c l ? ga u ge plane lead tip m 0.010 cab m 32 4 1 e1 d1 mi n . 0.265 (6.74) mi n . 0.245 (6.23) mi n . 0.0 8 9 (2.2 8 ) mi n . 0.06 (1.524) 0.4 88 (12.40) 0.409 (10.40) 0.093 (2.3 8 ) 0.0 8 5 (2.1 8 ) pad layout
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